Sign In | Join Free | My tjskl.org.cn |
|
Brand Name : Infineon Technologies
Model Number : IRF9540NPBF
Place of Origin : USA
MOQ : 1000
Price : negotiate
Payment Terms : T/T
Supply Ability : 2000
Packaging Details : Tube
Certification : RoHS
Delivery Time : 5-8 work days
product name : IRF9540NPBF
Vgs(th) (Max) Id : 4V 250µA
Gate Charge (Qg) (Max) Vgs : 97 nC 10 V
Vgs (Max) : ±20V
Rds On (Max) Id, Vgs : 117mOhm 11A, 10V
Supplier Device Package : TO-220AB
Fifth Generation HEXFETS from Intemational Rectifieutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETS are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide vanety of applications.
The TO-220 package is universally preferred for allcommercialindustrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220contribute to its wide acceptance throughout theindustry.
Specification of IRF9540NPBF
Mfr
|
Infineon Technologies
|
Series
|
HEXFET
|
Product Status
|
Active
|
FET Type
|
P-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
100 V
|
Current - Continuous Drain (Id) 25°C
|
23A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max) Id, Vgs
|
117mOhm 11A, 10V
|
Vgs(th) (Max) Id
|
4V 250µA
|
Gate Charge (Qg) (Max) Vgs
|
97 nC 10 V
|
Vgs (Max)
|
±20V
|
Input Capacitance (Ciss) (Max) Vds
|
1300 pF 25 V
|
FET Feature
|
-
|
Power Dissipation (Max)
|
140W (Tc)
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
Mounting Type
|
Through Hole
|
Supplier Device Package
|
TO-220AB
|
Package / Case
|
TO-220-3
|
![]() |
P Channel IRF9540NPBF Circuit Chips 100 V 23A (Tc) 140W (Tc) Through Hole TO-220AB Images |